Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band

Superluminescent diodes with broad emission bandwidth characteristics and the mechanism of carrier distribution in the active layer are explored. Asymmetric active layer structure is used for the broadband purpose. Using InP substrate with five 60a InGaAsP quantum wells and two 150a InGaAs quantum wells, we get a very broad emission spectrum. The spectral width is nearly 400 nm, almost covering the range from 1250nm to 1650nm.