Switching of 3300V Scaled IGBT by 5V Gate Drive

In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail current of the scaled devices significantly decreased. The improvement of $E_{\mathrm{off}}$ vs $V_{\mathrm{cesat}}$ relationship by 35% was achieved.