Selective and Non-Planar Epitaxy of lnP, GalnAs and GalnAsP Using Low Pressure MOCVD

Abstract Selective area and non-planar MOCVD of InP, GaInAs, and GaInAsP can radically modify the properties of these alloys relative to planar “whole wafer” epitaxy. This paper outlines qualitative and quantitative studies aimed at understanding the various, often interrelated, effects and indicates their significance to the fabrication of integrated devices.