A Drive-by-Microwave isolated gate driver with a high-speed voltage monitoring

A new isolated Drive-by-Microwave (DBM) gate driver with a high-speed voltage monitoring for over current detection is proposed, which is composed of a 2.4GHz GaN/Si DBM transmitter, DBM receiver chip and compact isolated couplers in a low-cost printed circuit board. The fabricated DBM gate driver demonstrates a 200 Mbps isolated data transmission and a GaN power switching device's driving with a turn-on skew rate of 4.2kV/us. Furthermore, it successfully detects the isolated 1.0Mbps monitoring signal at the secondary side without any isolated voltage source by means of detecting the 2.4GHz return power changing that results from the impedance miss matching of the varicap diode at a receiver.