Nanocrystallization and interfacial tension of sol-gel derived memory

The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600°C annealing, and finally transferred into NCs at 900°C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600°C annealing was varied and had higher interfacial energy. The crystallized process at 900°C annealing could minimize the energy. The retention for 900°C annealed sample exhibited less than 30% charge loss after 106s at 125°C measurement.