Prismatical phase transition material nano-array and preparation method thereof

The invention relates to a phase transition material nano-array and a preparation method thereof. The prismatical phase transition material nano-array with a prismatical structure diameter of about 50nm can be prepared by etching and finishing photoresist with the reaction ion etching technique on the basis of the submicron CMOS standard process exposure technique. The phase transition material nano-array and the preparation method thereof not only avoid the difficulty of directly using the exposure technique less than 100nm and reduces the manufacturing cost, but also more importantly reduces the operating current and the power dissipation of the phase transition storage and lays a foundation for the development of the phase transition storage in the direction of high speed, high density, low voltage and low power dissipation. The phase transition material nano-array and the preparation method thereof are not only suitable for preparing the phase transition material nano-array for a phase transition storage, but also for preparing other electronic devices, in particular to nanoscale material membranes required by nano electronic devices, thus having great application value.