Reduced poly-Si TFT threshold voltage instability by high-temperature hydrogenation of a-Si-like spin centers

New findings of this work are as follows: a-Si-like spin centers (.Si/spl equiv/Si/sub 3/) are found to exist in CVD-SiO/sub 2/ gate dielectric films as well as poly-Si substrate films. High-temperature hydrogenation (HTH) at 850/spl deg/C is effective in terminating these spin centers and in reducing the poly-Si PMOS TFT threshold voltage instability.