High-Quality β -Ga 2 O 3 Films with Influence of Growth Temperature by Pulsed Laser Deposition for Solar-Blind Photodetectors

High-quality β-Ga2O3 films were grown on (0001) sapphire substrates at various substrate temperature by pulsed laser deposition (PLD) in a high vacuum chamber. Low pressure (1.6 mPa) and high reactivity oxygen plasma was introduced as reaction gas. The films were used to fabricate metal–semiconductor–metal (MSM) solar-blind photodetectors by electron-beam evaporation. The β-Ga2O3 -based photodetector exhibited high performance with a low dark current (about 40 pA), fast response speed (τrise: 0.17 s, τdecay: 0.03 s) and high responsivity (0.35 A/W). These results represent the high quality of β-Ga2O3 films and excellent performance for PLD-grown β-Ga2O3 -based MSM solar-blind photodetectors.