Studies of bulk damage induced in different silicon materials by 900 Mev electron irradiation

Abstract Silicon test structures manufactured on different substrate materials (standard and oxygenated float-zone, magnetic and non-magnetic Czochralski, epitaxial silicon) have been irradiated with 900 MeV electrons up to a fluence of 6.1 × 10 15 e / cm 2 . Results are reported on the variation of the effective dopant concentration and of the leakage current density as a function of the electron fluence. The time evolution of the effective dopant concentration is also reported after thermal annealing cycles at 80 ∘ C .