Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applications

Abstract Al 2 O 3 thin films with thickness between 2 and 100 nm were synthetized at 250 °C by thermal atomic layer deposition on silicon substrates. Characterizations of as-deposited and annealed layers were carried out using ellipsometry, X-ray reflectivity, and X-ray photoelectron spectroscopy. A silicon-rich SiO x layer at the interface between Si and Al 2 O 3 was introduced in the optical models to fit the experimental data. Surface passivation performances of Al 2 O 3 layers deposited on n-type float-zone monocrystalline silicon were investigated as a function of thickness and post-deposition annealing conditions. Surface recombination velocity around 2 cm.s − 1 was measured after the activation of the negative charges at the Si/Al 2 O 3 interface under optimized annealing at 400 °C for 10 min. The evolution of the interface layer and of the material properties with the thermal treatment was studied.