language-icon Old Web
English
Sign In
Acemap > Paper > Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization

Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization

2019 
Keywords:
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    4
    References
    0
    Citations
    NaN
    KQI
    []
    logo
    • CCF Conference Analysis
    • Map Galaxy
    • What's New
    © Copyright 2015-2020 Acemap, Inc. Shanghai Jiao Tong University.