THz imaging Si MOSFET system design at 215 GHz
2014
Exelis Geospatial Systems and its CEIS partners at the University of Rochester and Rochester Institute of Technology
are developing an active THz imaging focal plane for use in standoff detection, molecular spectroscopy and penetration
imaging. This activity is focused on the detection of radiation centered on the atmospheric window at 215.5 GHz. The
pixel consists of a direct coupled bowtie antenna utilizing a 0.35 μm CMOS technology MOSFET, where the plasmonic
effect is the principle method of detection. With an active THz illumination source such as a Gunn diode, a design of
catadioptric optical system is presented to achieve a resolution of 3.0 mm at a standoff distance of 1.0 m. The primary
value of the initial system development is to predict the optical performance of a THz focal plane for active imaging and
to study the interaction of THz radiation with various materials.
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