Spontaneous and stimulated emission in InAs-based LED heterostructures

Electroluminescence of 'flip-chip' LED heterostructures containing active layers made of InAs and barrier layers made of InAsSb(Ga,P) was studied experimentally and modelled. At the room temperature, spontaneous emission attributed to band-to-band recombination was observed. The shape of the EL band was strongly affected by absorption in the substrate. At low temperatures (T=4.2 and 77 K), stimulated emission was observed. Factors affecting the appearance and quenching of stimulated emission are discussed.