Power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) package body and package method thereof

The invention provides a power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) package body, which comprises a first chip, a second chip and a lead frame, wherein the first chip and the second chip are power MOSFET chips; a source electrode and a grid electrode are respectively arranged on the front side of each chip; a drain electrode is arranged on the back side of each chip; the lead frame is provided with a plurality of pins; two chips are attached to the lead frame in parallel; the front side of the first chip and the back side of the second chip face to the lead frame; and the drain electrode on the back side of the second chip and the source electrode of the first chip are attached to the same pin of the lead frame. By using the invention, two MOSFET chips are inversely attached to the lead frame and the drain electrode of one chip and the source electrode of the other chip are attached to the same pin; by using the special package mode, the function finished by two package bodies in the prior art can be achieved and the package body is minimized; and in addition, the invention saves the space of a PCB (Printed Circuit Board) and simplifies the wiring process and the manufacturing cost of the PCB.