An X-Ray Diffraction System for Evaluating the Epitaxial Growth of III-V Alloy Semiconductors

1984 
Abstract : The purpose ot this grant was the acquisition of an X-ray diffractometer system for use in evaluating the heteroepitaxial growth of III-V semiconductor compounds and alloys. The diffraction data permit a determination of the lattice constant mismatch between the single crystal substrate and the epilayer. Keywords: Semiconductors, X-Ray diffraction, Epitaxial growth.
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