Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System
2020
The state of the pn junction is
very important to explain the performances of a solar
cell. Some works give the influence of the electric field on the junction
capacitance. However, these works do not relate the quality of the p - n junction under the electic field. The present manuscript is about a
theoretical modelling of the p - n junction capacitance behavior of the
polycrystalline silicon solar cell under an integration of the external
electrical field source. An external electrical source is integrated in a solar
cell system. The electronic carriers charge generated in the solar cell crossed mainly
the junction with the great strength external electrical field. In open
circuit, this crossing of the electronic charge carriers causes the thermal
heating of the pn junction by Joule
effect. The pn-junction capacitance
plotted versus the junction dynamic velocity and the photo-voltage for different
external electrical fields. The electric field causes the decrease of the
photo-voltage mainly the open-circuit photo-voltage. The decrease of the
photo-voltage translates the narrowing of the Space Charge Region (SCR). The
average value of the external electric field used in this study is not
sufficient to cause the breakdown of the pn-junction
of the solar cell system under integration of the external electrical field
production source. The increase of the electrical field causes rather the
narrowing of the SCR. That can provide an improvement of the solar cell’s
electrical outputs.
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