채널 길이의 변화에 따른 단일 게이트 피드백 전계효과 트랜지스터의 메모리 윈도우 특성

In this study, we examined the simulated electrical characteristics of single-gated feedback field effect transistors (FBFETs) and the influence of channel length variation of the memory window characteristics through the 3D device simulation. The simulations were carried out for various channel lengths from 50 nm to 100 nm. The FBFETs exhibited zero SS( on /I off ratio∼1.27×1010. In addition, the memory windows were 0.31 V for 50 nm-channel-length devices while no memory windows were observed for 100 nm-channel-length devices.