A 16Gb/s area-efficient LD driver with interwoven inductor in a 0.18µm CMOS

This paper presents the fastest laser-diode driver with interwoven peaking inductor in 0.18µm CMOS. Six and four inductors are interwoven into two sets of inductors for area-effective implementation as well as performance enhancement. The operation speed enhancement of the proposed circuit is achieved by tuning mutual inductances of interwoven inductors. The circuit area is 0.34-mm 2 and the maximum operating speed is 16-Gb/s.