Non-volatile memories based on Si+-implanted gate oxides
2001
Abstract Electrical properties of 20–30 nm gate oxides implanted with Si + ions are investigated using MOS capacitors and transistors. The observed programming window can reach several volts and the devices exhibit good retention behavior. A first 256 k – nvSRAM is demonstrated showing a programming window >1 V for write pulses of 12 V/8 ms.
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