Old Web
English
Sign In
Acemap
>
Paper
>
CMOS and interconnect reliability gate dielectric breakdown - modeling and mechanism
CMOS and interconnect reliability gate dielectric breakdown - modeling and mechanism
2005
P. Nicollian
K. Eriguchi
Keywords:
Dielectric strength
Gate dielectric
Optoelectronics
Semiconductor device modeling
Physics
Electrical breakdown
Time-dependent gate oxide breakdown
Interconnection
Hydrogen
CMOS
Electronic engineering
Hafnium oxide
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI
[]