Polymer-based optical amplifiers for operation at 1.55 μm

Erbium doped polymer waveguide amplifier for operation at 1.55 micrometers was studied. A fluorinated polyimide was doped with Er ions using ion implantation. The samples were irradiated at room temperature by 320 keV Er 2+ and 160 keV Er + ions. Doses used were 1 by 10 15 /cm 2 and 1 by 10 14 /cm 2 respectively. The implanted samples were characterized using Rutherford Backscattering and SIMS analysis. The implanted ion profile was nearly Gaussian with range of 0.25 micrometers for the 320 keV implant and 0.12 micrometers for the 160 keV implant. A Gaussian implanted ion profile, matched with the electric field profile of the waveguide mode, can enhance the efficiency of energy transfer between the waveguide mode and the active ions. The implant depth of Er in polyimide at the energies used is shallow. In order to achieve the overlap with the electric field profile, a two layer waveguide amplifier structure is proposed. Such doping and waveguide fabrication techniques are compatible with the existing silicon technology.