Formation of (Ti x W 1-x )Si 2 /(Ti x W 1-x )N contacts by rapid thermal silicidation

The formation of (Ti x W 1-x )Si 2 /(Ti x W 1-x )N by rapid thermnal processing of Ti x W 1-x on Si in an N 2 ambient is investigated. A distinct snowploughing of As atoms is observed during silicide formation. The diffusion barrier properties of the (Ti x W 1-x )Si 2 /(Ti x W 1-x )N stack in contact with Al is investigated upon post-metal annealing.