Method for direct and rapid preparation of single-layer graphene on SiO2/Si substrate

The invention discloses a method for direct and rapid preparation of single-layer graphene on a SiO2/Si substrate. The method comprises the following main steps: depositing a layer of a crystallized metal catalytic material film on the SiO2/Si substrate and then uniformly coating the surface of the metal catalytic material film with a solid carbon source; carrying out high-temperature treatment on the previously-obtained sample by using simple rapid heat treatment technology, wherein in the process of rapid high-temperature heat treatment, a part of the carbon source on the surface of the metal catalytic material film is diffused onto the surface of SiO2 through metal grain boundaries and forms single-layer graphene under active catalysis of metal, and the rest part of amorphous carbon is left on the surface of the film; and finally, carrying out simple metal dissolving so as to obtain single-layer graphene with SiO2/Si as a substrate. With the method provided by the invention, large-area high-quality single-layer graphene can be directly obtained on the SiO2/Si substrate. The method has simple and rapid preparation process, is compatible with current microelectronic process, does not need transfer of the substrate and is beneficial for device processing and application of graphene.