Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces

In GaSb/GaAs hetero-epitaxy, it is shown that a two-dimensional growth of GaSb promotes the generation of Lomer dislocations and confines the lattice mismatched strain at the hetero-interface. In contrast, 60° dislocations and closely spaced 60° pairs are predominantly generated in the three-dimensional growth mode. Consequently, a 60° dislocation glide model in combination with surface effects is able to account for the formation of Lomer, 60°, and 60° dislocation pair at high or low mismatch at hetero-interface between zinc-blende materials.