Modeling of transient charge collection induced by an angled single ion strike

Single-event phenomena (SEP) are common occurrences in electronic devices used in high-radiation fields such as space environments. SEP are primarily caused by the interaction between ionization tracks generated by a high-energy heavy ion and sensitive regions of a semiconductor device. In order to develop SEP tolerance devices, it is necessary to predict the amount of the collected charge at sensitive regions. In this paper, comparing the experimental results obtained from the waveform of the transient current induced by a heavy ion and from a geometrical model, we have studied the ion-induced transient charge as a function of an angle and the linear energy transfer (LET) of the incident ions.