Old Web
English
Sign In
Acemap
>
Paper
>
Modulation-doped Si 1- x- y Ge x C y p-type Hetero-FETs
Modulation-doped Si 1- x- y Ge x C y p-type Hetero-FETs
1998
Markus Glück
U. Konig
W. Winter
K. Brunner
K. Eberl
Keywords:
Condensed matter physics
Physics
Doping
Molecular beam epitaxy
Valence band
Band gap
Modulation
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]