Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O3 Film by Metalorganic Chemical Vapor Deposition

Pb(Zr,Ti)O3 (PZT) films were prepared on Si substrates at 600 °C by metalorganic chemical vapor deposition (MOCVD). Crystallinity of tetragonal PZT film was dramatically increased by making Pt bottom electrode layer on the Si substrate. Based on this observation, we succeeded in directly patterning PZT films having quite different crystal quality, i.e., well-crystallized (100)-/(001)-preferentially-oriented ones, and poorly-crystallized randomly-oriented ones, by pre-patterning Pt bottom electrodes. The achievement of the patterning of PZT films down a size of 1 µm was determined by scanning probe microscopy using a piezoresponse technique. As a result, we demonstrated the direct patterning of PZT films on Si substrates for the first time and introduced the possibility of directly patterning PZT films with good piezoelectric properties without post-deposition processes such as etching.