Silicon nitride films prepared by high energy ion beam enhanced deposition

Abstract Amorphous silicon nitride films have been synthesized by a simultaneous electron beam evaporation of silicon and high energy nitrogen ion bombardment. Surface sensitive techniques, angular-resolved X-ray induced photoelectron spectroscopy (ARXPS) and Auger electron spectroscopy (AES), have been used for the surface characterization of air-exposed films and concentration depth profiling. Optical and photoelectrical properties have been investigated via infra-red (IR) transmission spectroscopy and photoconductivity measurements. A specific feature of high ion beam kinetic energies and high atomic arrival rate ratios of N/Si is that a part of the silicon nitride is grown inside the silicon substrates. It is suggested that ion beam bombardment enhanced diffusion of nitrogen from deeper regions can contribute to the silicon nitride growth.