Interfacial sub-oxide regions at SiSiO2 interfaces: minimization by post-oxidation rapid thermal anneal

Transition regions at Si-SiO 2 interfaces contain suboxide bonding arrangements which contribute to interface roughness and may give rise to electronically active defects. Interfacial transition regions with suboxide bonding are a direct result of thermal and plasma-assisted oxidation at temperatures up to at least 800°C, but sub-oxide bonding is significantly reduced following a 30 s, 900°C RTA. The kinetics of annealing are essentially the same as those for separation of homogeneous sub-oxide thin films (SiO X , x < 2) into silicon nanocrystals and stoichiometric SiO 2 .