Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes

Natural lithography with 100-nm-diameter SiO2 spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from 250 nm to 550 nm. Photodiodes fabricated from the surface-textured SiC showed broader spectral and angular responsivity than SiC photodiodes with SiO2 antireflective coating. The textured SiC photodiodes showed peak responsivity of 116 mA/W, large angle of acceptance angle (< 2% decrease in responsivity at 50 o incident angle) and low dark current at 10V.