Temperature Dependence and Annealing Behaviour of Hf Implanted (100)Si: HfSi 2 Synthesis

We investigated the formation of a buried HfSi 2 layer by high fluence ion implantation of isotopically mass separated 179–180 Hf + on heated silicon (100) substrates. It is shown that for the substrate temperature of 600°C a buried HfSi 2 layer is formed. By subsequent annealing at 1000 °C a continuous 12 nm HfSi 2 layer on the Si surface is formed followed by 130 nm big almost spherodized HfSi 2 ellipsoid and 80 nm small HfSi 2 and Si grains. The annealing of samples implanted at lower temperatures show that HfSi 2 is also formed but with reduced yield. A summary of the relevant data is presented.