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Electron localization by a metastable donor level in n-GaAs: A new mechanism limiting the free-carrier density.
Electron localization by a metastable donor level in n-GaAs: A new mechanism limiting the free-carrier density.
1988
T. N. Theis
P.M. Mooney
Steven L. Wright
Keywords:
Thin film
Charge-carrier density
Metastability
Atomic physics
Electron localization function
Kinetics
Inorganic compound
Limiting
Physics
Silicon
free carrier density
semiconductor materials
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