Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback

A positive feedback (PF) mechanism was adopted for the first time in the cell string of a 3-D NAND flash memory where n + and p + regions are formed on both ends of the string to implement a diode-type cell string. The body consists of a tube-type poly-Si channel. To generate the PF in the channel during a read operation, a new read operation scheme is proposed. In this paper, the simulator was calibrated in terms of trap density ( $D_{\mathrm {it}})$ of a poly-Si channel extracted from fabricated 3-D NAND flash memory cells. By utilizing the PF, a NAND flash memory cell in a cell string has a steep subthreshold swing of <1 mV/decade.