Scaling FDSOI technology down to 7 nm — A physical modeling study based on 3D phase-space subband boltzmann transport

We present the first truly full-band approach to solving the subband Boltzmann transport (SBTE) equation in three-dimensional phase space. The solution is applied to investigate the evolution of the FDSOI MOSFET towards the 7nm node. Our findings show that single-gate FDSOI technology can be effectively scaled down to the 14 nm node, because the on-current gains are large enough to offset the SS-degradation. Beyond 14 nm a double-gate thin-body geometry is required to maintain electrostatic control.