Hydrogen Passivation of Er and Si Nanocrystallites in Er-doped SiO 2 - Increase in Photoluminescence-

Hydrogen passivation effect on the enhancement of photoluminescence (PL) of Er ions in SiO2 films contained Si nanocrystallites (nc-Si) has been investigated. Er-doped SiO2 films were fabricated by laser ablation of Er-deposited Si substrate in oxygen gas atmosphere. The PL intensity of Er ions and nc-Si were increased by hydrogen gas treatments, while ESR signal intensity of residual defects located at the interfaces between nc-Si and SiO2 was decreased. These results indicate that hydrogen passivation of residual defects is useful for the enhancement of the Er PL.