MICROSCOPIC STUDIES OF IMPLANTED 73AS IN DIAMOND

Abstract In this work we present results on the lattice location and the microscopic surroundings of As implanted into diamond. A mixture of the isobars 73 Se and 73 As was implanted to a dose of 1.0 × 10 14 at/cm 2 with 60-keV energy. Complementary γ-e − Perturbed Angular Correlations (PAC), Emission Channeling (EC) and RBS/channeling (RBS/C) measurements were performed for the same sample, after full decay of 73 Se to 73 As. After annealing at 1400 K the EC and RBS/C spectra show that more than 50% of the As nuclei reside in substitutional positions, although some residual damage is still seen within the implanted range. On the other hand, the PAC data show that significant annealing of the lattice damage occurred only in the vicinity of 30% of the implanted As atoms, and that these have remaining defects in their neighborhood.