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MOCVD Ge 3 Sb 2 Te 5 for PCM Applications
MOCVD Ge 3 Sb 2 Te 5 for PCM Applications
2010
J. F. Zheng
J. Reed
C. Schell
W. Czubatyj
Regino Sandoval
Jacques J. A. Fournier
Weimin Li
William Hunks
C. Dennison
S Hudgens
Tyler Lowrey
Keywords:
Metalorganic vapour phase epitaxy
Analytical chemistry
Materials science
Optoelectronics
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