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An analysis of in-plane defect distribution of carbon-related defects in dry-oxide C-face 4H-SiC MOSFET
An analysis of in-plane defect distribution of carbon-related defects in dry-oxide C-face 4H-SiC MOSFET
2017
Yohei Kagoyama
Mitsuo Okamoto
Hironori Yoshioka
Shinsuke Harada
Takahiro Yamasaki
Takahisa Ohno
T. Umeda
Keywords:
Oxide
Carbon
MOSFET
Composite material
Materials science
in plane
Correction
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