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Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices
Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices
2019
Kento Iseri
Wei-Chen Wen
Keisue Yamamoto
Dong Wang
Hiroshi Nakashima
Keywords:
Semiconductor
Electronics
Optoelectronics
Fabrication
Materials science
gate stack
Correction
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