Single Crystallization of Aluminum on SiO2 by Thermal Annealing and Observation with Scanning µ-RHEED Microscope

We have found single crystallization of Al on patterned SiO2 by thermal annealing. Via-holes on the Si wafer were completely planarized by selective and nonselective chemical vapor deposition of Al using dimethylaluminum hydride and hydrogen. Single crystallization of Al on patterned SiO2 was observed with a scanning µ-RHEED microscope. Polycrystal (100) Al film on patterned SiO2 was changed into single-crystal (111) Al after the annealing at 645°C.