Old Web
English
Sign In
Acemap
>
Paper
>
Semiconductor Lasers and Hign Electron Mobility Transistors (HEMTs) Using InP-Related Materials
Semiconductor Lasers and Hign Electron Mobility Transistors (HEMTs) Using InP-Related Materials
2011
Naohito Yoshida
Keywords:
Electron mobility
Transistor
Metalorganic vapour phase epitaxy
Semiconductor laser theory
Electronic engineering
Materials science
Optoelectronics
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]