Simulation and analysis of high frequency small-signal characteristics for 4H-SiC MESFETs

Small-signal high frequency characteristics of 4H-SiC MESFETs have been studied with the two-dimensional device simulator MEDICI based on the operation model of 4H-SiC MESFETs developed in this paper. The simulation results using the Sinusoidal Steady-State analysis approach agree well with the experimental data within the cut-off frequency. Also, the effects of the gate length, gate-to-drain spacer distances, impurity concentration and temperature on the high frequency characteristic of SiC MESFETs have been studied based on the presented model.