A novel high performance WO x ReRAM based on thermally-induced SET operation

SET operation of unipolar transition-metal-oxide ReRAM is intrinsically difficult because the E-field is in an unfavorable direction (in the direction for RESET rather than SET), thus unipolar operation causes strong device degradation from the high current needed for SET operation. This work introduces a novel thermally induced SET operation that removes the high current stressing. By using an external heater we have provided heating without driving large current through the ReRAM device. This greatly improves the device performance and allows a high-density 1D1R array.