Influence of Carbon in in-situ Carbon Doped SiGe (SiGe:C) Films on Si (001) Substrates on Epitaxial Growth Characteristics

�C. The range of Growth rate was between 1.5 and 4.3 A ˚ /s. These SiGe:C analyzed by atomic force microscopy (AFM), secondary ion mass spectrometry (SIMS), high-resolution X-ray diffraction (HR-XRD) and cross-sectional transmission electron microscopy (TEM). Total C compositions did not depend on growth temperature with the constant Ge concentration and with SiH3CH3 flow ratio. Surface roughness of SiGe:C with high Ge concentration increased with the increase of C source gas flow. Interstitial C concentration in SiGe:C films with rough surface increased with the increase of C source gas flow. The roughness of SiGe:C layer grown constant C gas source flow ratio decreased for low growth temperature and/or faster growth rate. From these results, we revealed that the mechanism of defect formation with localized C as the cause of rough. The excess migration can suppress surface roughness. # 2010 The Japan Society of Applied Physics