First-principles study on the threshold switch selector Graphene/h-BN/Graphene and the improvement of its performance

In this work, a selector has been proposed with a simple single-layer Graphene/h-BN/Graphene structure. The partial charge density (PCD), DOS and PDOS proved that the Boron vacancies (V b ) conductive filament (CF) is formed when the threshold voltage (V th )is 0.5V, non-linearity (NL) is 104.Then, we found that V b with a concentration of 8.33% at the interface improves the performance of the selector significantly (NL increased by 10 times). This work will be instructive and valuable for the design and optimization of Graphene/h-BN/Graphene selector.