Substrate transfer for GaN-based LEDs on 200mm Si

This paper presents a substrate transfer process for GaN-based LEDs on 200mm Si wafer. The LED active layers are first grown on a 200mm-Si (111) substrate using the MOCVD method and LED devices are fabricated. Then a post-process is applied after the fabrication of LED devices to transfer the GaN-LED to a Si substrate carrier using permanent metallic bonding. In this process, the GaN-LED wafer is bonded to a carrier and Si substrate on the device wafer is totally removed to improve the light extraction efficiency of LED devices. Process step development for the important steps such as bonding, thinning, GaN surface texturing are described. The use of large size 200mm Si wafer and standard IC facility promises low cost and high volume production of LED devices.