Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a gsmbe system

Abstract Lattice matched metallic ErP 0.6 As 0.4 layers have been grown on GaAs, for the first time, by gas source molecular beam epitaxy (GSMBE). By adjusting the PH 3 and AsH 3 flows, a lattice mismatch below 5×10 −4 has been reproducibly achieved. These epitaxial films exhibit metallic behaviour with resistivities of 80–90 μω cm at room temperature and yield Schottky barrier diodes on GaAs with good characteristics. By cross-section transmission electron microscopy we demonstrated the good crystalline quality of the ErP 0.6 As 0.4 films and the overgrown GaAs layers.