Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–xMnxN film grown by MOCVD

A detailed study is presented on magnetic, electrical and optical properties of Ga1−xMnxN: Si film grown by metal organic chemical vapor deposition (MOCVD) with high-purity SiH4 as the Si dopant source. The room-temperature field dependence magnetization and zero-field-cooled (ZFC)/field-cooled (FC) measurements indicate that the film remains room-temperature ferromagnetism and it declines slightly after Si co-doping. However, room-temperature Hall measurements indicate that the electrical property of the film improves distinctly compared with Ga1−xMnxN. Cathode luminescence (CL) measurements show an obvious enhancement in luminous property and different peak strength changes at three different positions. Therefore, we demonstrate that Fermi level and the electron structure of Mn atoms will change with variation of the impurities co-doped and the intrinsic defects and this may be related with room-temperature ferromagnetism and the other corresponding properties of the film.