Temperature dependence of the width of the deep-level band in silicon with a high concentration of defects
2002
Temperature dependences of the peak location and the half-width of the absorption band related to neutral divacancies in the spectrum of Si irradiated with neutrons at a dose of 1019 cm−2 were studied. The results were analyzed in terms of the concept of the defect-level band, whose width depends on the degree of compensation and on temperature.
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