Survey of Study on Silicon-based Low-dimension Films for Infrared Detector

Monolithically integrating photodetectors with Si CMOS circuitry would result an optoelectronic chip with significant increase in performance and reduction in cost. Here the Si photodetectors formed using both the quantum well and quantum dot structures are reported. Attention is also devoted to the physical principle of low dimension silicon as infrared detectors,as they are intended for applications on acquisition from stacks of detectors.The recent emphasis of research is proposed.